Product specification
WNM2023
Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 0.052@ VGS=1.8V SOT-23-3L
Descriptions
D
The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
(ON)
3
technology and design to provide excellent RDS
with low gate charge. This device is suitable...
