BSH111
N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23.
2. Features
s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surfa...
