2SC3515. C3515 Datasheet

C3515 2SC3515. Datasheet pdf. Equivalent


Part C3515
Description 2SC3515
Feature TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 2SC3515 HIGH Voltage Con.
Manufacture Toshiba
Datasheet
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT pro C3515 Datasheet
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C3515
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
2SC3515
HIGH Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
· High voltage: VCBO = 300 V, VCEO = 300 V
· Low saturation voltage: VCE (sat) = 0.5 V (max)
· Small collector output capacitance: Cob = 3 pF (typ.)
· Complementary to 2SA1384
· Small flat package
· PC = 1.0 to 2.0 W (mounted on ceramic substrate)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
300
300
6
100
20
500
1000
150
55 to 150
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 mmt)
Unit
V
V
V
mA
mA
mW
°C
°C
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2002-08-13



C3515
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 300 V, IE = 0
IEBO
VEB = 6 V, IC = 0
V (BR) CBO IC = 0.1 mA, IE = 0
V (BR) CEO IC = 1 mA, IB = 0
hFE (1)
(Note 2)
VCE = 10 V, IC = 20 mA
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = 10 V, IC = 20 mA
IC = 20 mA, IB = 2 mA
IC = 20 mA, IB = 2 mA
VCE = 10 V, IC = 20 mA
VCB = 20 V, IE = 0, f = 1 MHz
Note 2: hFE (1) classification R: 30 to 90, O: 50 to 150
Marking
Type name
hFE classification
IO
2SC3515
Min Typ. Max Unit
  0.1 µA
  0.1 µA
300 
V
300 
V
30  150
20  
  0.5
V
  1.0
V
50 80  MHz
 3
4 pF
2 2002-08-13







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