N-Channel MOSFET. AOD490 Datasheet

AOD490 MOSFET. Datasheet pdf. Equivalent

Part AOD490
Description N-Channel MOSFET
Feature AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description The AOD490 u.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOD490 Datasheet

AOD490 N-Channel Enhancement Mode Field Effect Transistor SR AOD490 Datasheet
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AOD490
AOD490
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
The AOD490 uses advanced trench technology with a
monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
-RoHS Compliant
-Halogen Free*
Features
VDS (V) = 30V
ID =40A (VGS = 10V)
RDS(ON) < 6.8m(VGS = 10V)
RDS(ON) < 8.3m(VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
Top View
D
TO-252
D-PAK Bottom View
D
SRFETTM
Soft Recovery MOSFET:
G Integrated Schottky Diode
GS
SG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C G
Current B
TC=100°C G
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
CurrentA
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
S
Maximum
30
±12
40
31
100
15
12
30
135
63
31
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
15
41
2
Max
20
50
2.4
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AOD490
AOD490
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
IDSS
IGSS
VGS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
TJ=125°C
ID(ON)
On state drain current
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, VDS=5V
VGS=10V, ID=20A
VGS=4.5V, ID=20A
TJ=125°C
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode + Schottky Continuous Current G
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs
30
1.5
100
0.1
20
0.1
1.85 2.4
5.5
8.5
6.7
110
0.37
6.8
10.7
8.3
0.5
40
4000
520
217
0.6
5000
0.9
59 77
27
12
11
9
9
37
8
16
22
V
mA
µA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The power dissipation P DSM and current rating IDSM are based on TJ(MAX)=150°C, using t 10s junction-to-ambient thermal
resistance.The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be
used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.





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