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3SK233

Hitachi Semiconductor

Silicon N-Channel Dual Gate MOS FET


Description
3SK233 Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature Low voltage operation. Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDS 12 V ——————————————————————– Gate 1 to source voltage VG1S ±10 V —————————————————...



Hitachi Semiconductor

3SK233

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