Silicon NPN Power Transistor
Description
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage
: VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use low frequency amplifilier and low switching sp...
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