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WNM2024

Part Number	WNM2024
Manufacturer	Will Semiconductor
Description	N-Channel MOSFET
Published	Apr 29, 2017
Detailed Description	WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1...
Datasheet	WNM2024 PDF File

Overview

WNM2024 Single N-Channel, 20V, 3.
9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.
027@ VGS=4.
5V 0.
031@ VGS=2.
5V 0.
036@ VGS=1.
8V Descriptions The WNM2024 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2024 is Pb-free.
Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications WNM2024 Http//:www.
willsemi.
com SOT-23 D 3 12 GS Pin configuration (Top view) 3 W24* 12 W24=...

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