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BUZ10

Part Number	BUZ10
Manufacturer	Siemens Semiconductor Group
Description	Power Transistor
Published	Mar 23, 2005
Detailed Description	BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D...
Datasheet	BUZ10 PDF File

Overview

BUZ 10 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 10 VDS 50 V ID 23 A RDS(on) 0.
07 Ω Package TO-220 AB Ordering Code C67078-S1300-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 23 Unit A ID IDpuls 92 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 23 1.
3 mJ ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.
1 µH, Tj = 25 °C Gate source voltage Power dissipation 8 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip ca...

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