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BUZ101S

Siemens Semiconductor Group
Part Number BUZ101S
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt...
Datasheet PDF File BUZ101S PDF File

BUZ101S
BUZ101S

Overview
Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 G Type BUZ 101 S Pin 2 D Pin 3 S VDS 55 V ID 22 A RDS(on) 0.
06 Ω Package TO-220 AB Ordering Code Q67040-S4013-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 22 16 Unit A ID TC = 25 °C TC = 100 °C Pulsed drain current IDpuls 88 TC = 25 °C Avalanche energy, single pulse EAS 90 mJ ID = 22 A, VDD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IAR EAR dv/dt 22 5.
5 A mJ kV/µs IS = 22 A, VDS = 40 V, diF/dt ...


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