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BUZ103S

Siemens Semiconductor Group
Part Number BUZ103S
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 103 S SPP31N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C o...
Datasheet PDF File BUZ103S PDF File

BUZ103S
BUZ103S

Overview
BUZ 103 S SPP31N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 31 A RDS(on) 0.
04 Ω Package Ordering Code BUZ 103 S TO-220 AB Q67040-S4009-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 31 22 Pulsed drain current TC = 25 °C IDpuls 124 E AS Avalanche energy, single pulse ID = 31 A, V DD = 25 V, RGS = 25 Ω L = 291 µH, Tj = 25 °C mJ 140 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 31 A, VDS = 40 V, diF/dt = 200 A/...


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