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BUZ11

Siemens Semiconductor Group
Part Number BUZ11
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 11 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D...
Datasheet PDF File BUZ11 PDF File

BUZ11
BUZ11

Overview
BUZ 11 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 VDS 50 V ID 30 A RDS(on) 0.
04 Ω Package TO-220 AB Ordering Code C67078-S1301-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 30 Unit A ID IDpuls 120 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 30 1.
9 mJ ID = 30 A, VDD = 25 V, RGS = 25 Ω L = 15.
6 µH, Tj = 25 °C Gate source voltage Power dissipation 14 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 1.
67 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 07/96 BUZ 11 Not for new design Electrical Characteristics, at Tj = 25°C, un...


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