N-channel enhancement mode field effect transistor
Description
BSH114
N-channel enhancement mode field effect transistor
Rev. 01 — 09 November 2000
M3D088
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH114 in SOT23.
2. Features
s s s s TrenchMOS™ technology Low on-state resistance Very fast switching Surf...