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BF1100

NXP
Part Number BF1100
Manufacturer NXP
Description Dual-gate MOS-FETs
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semicon...
Datasheet PDF File BF1100 PDF File

BF1100
BF1100

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC.
APPLICATIONS • VHF and UHF applications such as television tuners and professional communications equipment.
DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package.
The transistor consists of an amplifier MOS-FET with source BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION handbook, halfpage d 3 d handbook, halfpage 4 3 4 g2 g1 1 Top view g2 g1 2 1 MAM125 - 1 2 MAM124 s,b Top view s,b BF1100 marking code: M56.
BF1100R marking code: M57.
Fig.
1 Simplified outline (SOT143) and symbol.
Fig.
2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F 1995 Apr 25 drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz 2 PARAMETER drain-source voltage CONDITIONS − − − − 24 − − − MIN.
− − − − 28 2.
2 25 2 TYP.
MAX.
14 30 200 150 33 2.
6 35 − UNIT V mA mW °C mS pF fF dB Philips Semiconductors Product specification Dual-gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS ID IG1 IG2 Ptot P...


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