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BF1101R

Part Number	BF1101R
Manufacturer	NXP
Description	N-channel dual-gate MOS-FETs
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product speciﬁcation Superse...
Datasheet	BF1101R PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product speciﬁcation Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.
handbook, 2 columns 4 BF1101; BF1101R; BF1101WR PINNING...

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