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BFG193

Infineon Technologies AG
Part Number BFG193
Manufacturer Infineon Technologies AG
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFG193 NPN Silicon RF Transistor  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  f...
Datasheet PDF File BFG193 PDF File

BFG193
BFG193

Overview
BFG193 NPN Silicon RF Transistor  For low noise, high-gain amplifiers up to 2 GHz  For linear broadband amplifiers  fT = 8 GHz 4 F = 1.
3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFG193 Maximum Ratings Parameter Marking BFG193 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 80 10 600 150 -65 .
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150 -65 .
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150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS  87 °C 1) Junction temperature Ambient temperature Storage temperature mA ...


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