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FDMS86200

ON Semiconductor
Part Number FDMS86200
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Oct 15, 2019
Detailed Description FDMS86200 MOSFET, N‐Channel, Shielded Gate, POWERTRENCH) 150 V, 35 A, 18 mW General Description This N−Channel MOSFET i...
Datasheet PDF File FDMS86200 PDF File

FDMS86200
FDMS86200

Overview
FDMS86200 MOSFET, N‐Channel, Shielded Gate, POWERTRENCH) 150 V, 35 A, 18 mW General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.
This process has been optimized for the on−state resistance and yet maintain superior switching performance.
Features • Shielded Gate MOSFET Technology • Max rDS(on) = 18 mW at VGS = 10 V, ID = 9.
6 A • Max rDS(on) = 21 mW at VGS = 6 V, ID = 8.
8 A • Advanced Package and Silicon combination for low rDS(on) and high efficiency • MSL1 robust package design • 100% UIL tested • RoHS Compliant Applications • DC−DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current: − Continuous TC = 25°C − Continuous TA = 25°C (Note 1a) − Pulsed 150 V ±20 V A 35 9.
6 100 EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 3) Power Dissipation: TC = 25°C TA = 25°C (...


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