N-Channel MOSFET
Description
isc N-Channel Mosfet Transistor
BUZ11
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION Designed for applications such as switching regulators, switching converters,...
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