DatasheetsPDF.com

FDG6303N

ON Semiconductor
Part Number FDG6303N
Manufacturer ON Semiconductor
Description Dual N-Channel Digital FET
Published Jan 24, 2023
Detailed Description Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effec...
Datasheet PDF File FDG6303N PDF File

FDG6303N
FDG6303N

Overview
Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features • 25 V, 0.
50 A Continuous, 1.
5 A Peak ♦ RDS(ON) = 0.
45 W @ VGS = 4.
5 V ♦ RDS(ON) = 0.
60 W @ VGS = 2.
7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.
5 V) • Gate−Source Zener for ESD Rugge...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)