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AM82731-050

Part Number	AM82731-050
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS
Published	Mar 26, 2005
Detailed Description	AM82731-050 . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER...
Datasheet	AM82731-050 PDF File

Overview

AM82731-050 .
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RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN.
WITH 6 dB GAIN .
400 x .
400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50 DESCRIPTION The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input ove...

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