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3SK249

Toshiba Semiconductor
Part Number 3SK249
Manufacturer Toshiba Semiconductor
Description N-CHANNEL DUAL GATE MOS TYPE TRANSISTOR
Published Mar 30, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 3SK249 TV Tuner, UHF RF Amplifier Applicat...
Datasheet PDF File 3SK249 PDF File

3SK249
3SK249

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance.
• Low reverse transfer capacitance: Crss = 20 fF (typ.
) • Low noise figure.
: NF = 1.
5dB (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range VDS VG1S VG2S ID PD Tch Tstg 12.
5 ±8 ±8 30 100 125 −55~125 V V V mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.
) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the TOSHIBA 2-2K1B absolute maximum ratings.
Weight: 0.
006 g (typ.
) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Gate 1 leakage current Gate 2 leakage current Drain-source voltage Drain current Gate 1-source cut-off voltage Gate 2-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol Test Condition Min Typ.
Max Unit IG1SS VDS = 0, VG1S = ±6 V, VG2S = 0 ⎯ ⎯ ±50 nA IG2SS VDS = 0, VG1S = 0, VG2S = ±6 V ⎯ ⎯ ±50 nA V (BR) DSX VG1S = −0.
5 V, VG2S = −0.
5 V ID = 100 μA 12.
5 ⎯ ⎯ V IDSS VDS = 6 V, VG2S = 4.
5 V, VG1S = 0 V 0 ⎯ 0.
1 mA VG1S (OFF) VDS = 6 V, VG2S = 4.
5 V, ID = 100 μA 0.
4 0.
9 1.
4 V VG2S (OFF) VDS = 6 V, VG1S = 4.
0 V, ID = 100 μA 0.
5 1.
0 1.
5 V ⎪Yfs⎪ VDS = 6 V, VG2S = 4.
5 V, ID = 10 mA, f = 1 kHz 17 ...


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