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3SK256

Part Number	3SK256
Manufacturer	Toshiba Semiconductor
Description	Silicon N Channel Dual Gate MOS Type FET
Published	Mar 30, 2005
Detailed Description	3SK256 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK256 TV Tuner, UHF RF Amplifier Applicati...
Datasheet	3SK256 PDF File

Overview

3SK256 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK256 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance.
· Low reverse transfer capacitance: Crss = 0.
015 pF (typ.
) · Low noise figure: NF = 1.
9dB (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.
5 ±8 ±8 30 100 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2K1B Weight: 0.
006 g (typ.
) Characteristics Gate 1 leakage ...

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