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3SK260

Part Number	3SK260
Manufacturer	Toshiba Semiconductor
Description	Silicon N Channel Dual Gate MOS Type FET
Published	Mar 30, 2005
Detailed Description	3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications VHF ...
Datasheet	3SK260 PDF File

Overview

3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications VHF RF Amplifier Applications Unit: mm · High conversion gain: GCS = 24.
5dB (typ.
) · Low noise figure: NFCS = 3.
3dB (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.
5 ±8 ±8 30 100 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2K1B Weight: 0.
006 g (typ.
) Characteristics Symbol Test Condition Gate 1 leakage current...

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