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3SK296

Hitachi Semiconductor
Part Number 3SK296
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Dual-Gate MOSFET
Published Mar 30, 2005
Detailed Description 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise...
Datasheet PDF File 3SK296 PDF File

3SK296
3SK296

Overview
3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st.
Edition Application UHF RF amplifier Features • Low noise figure.
NF = 2.
0 dB Typ.
at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 4 1 1.
Source 2.
Gate1 3.
Gate2 4.
Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol V(BR)DSX V(BR)G1SS V(BR) G2SS I G1SS I G2SS I DS(on) Min 12 ±8 ±8 — — 0.
5...


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