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FDG6301N

Fairchild Semiconductor
Part Number FDG6301N
Manufacturer Fairchild Semiconductor
Description Dual N-Channel/ Digital FET
Published Mar 30, 2005
Detailed Description July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode fi...
Datasheet PDF File FDG6301N PDF File

FDG6301N
FDG6301N

Overview
July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features 25 V, 0.
22 A continuous, 0.
65 A peak.
RDS(ON) = 4 Ω @ VGS= 4.
5 V, RDS(ON) = 5 Ω @ VGS= 2.
7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.
5 V).
Gate-Source Zener for ESD ruggedness (>6k...


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