DatasheetsPDF.com

FDG6308P

Part Number	FDG6308P
Manufacturer	Fairchild Semiconductor
Description	P-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	FDG6308P January 2001 FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V s...
Datasheet	FDG6308P PDF File

Overview

FDG6308P January 2001 FDG6308P P-Channel 1.
8V Specified PowerTrench MOSFET General Description This P-Channel 1.
8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Applications • Battery management • Load switch Features • –0.
6 A, –20 V.
RDS(ON) = 0.
40 Ω @ VGS = –4.
5 V RDS(ON) = 0.
55 Ω @ VGS = –2.
5 V RDS(ON) = 0.
80 Ω @ VGS = –1.
8 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package S G D S 1 or 4 Pin 1 D G S G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6...

Similar Datasheet

FDG6301N Dual N-Channel/ Digital FET - Fairchild Semiconductor
FDG6301N Dual N-Channel Digital FET - ON Semiconductor
FDG6301N-F085 Dual N-Channel Digital FET - ON Semiconductor
FDG6302P Dual P-Channel/ Digital FET - Fairchild Semiconductor
FDG6303N Dual N-Channel Digital FET - Fairchild Semiconductor
FDG6303N Dual N-Channel Digital FET - ON Semiconductor
FDG6304P Dual P-Channel Digital FET - ON Semiconductor
FDG6304P Dual P-Channel/ Digital FET - Fairchild Semiconductor
FDG6306P P-Channel MOSFET - ON Semiconductor
FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)