NPN TRANSISTOR
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4781
Strobe Flash Applications Medium Power Amplifier Applications
2SC4781
Unit: mm
High DC current gain and Excellent hFE linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A)
: hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 m...
Toshiba Semiconductor
2SC4781 PDF File
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