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IRF7832

International Rectifier
Part Number IRF7832
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94594E IRF7832 Applications l Synchronous MOSFET for Notebook VDSS Processor Power l Synchronous Rectifier MOSFE...
Datasheet PDF File IRF7832 PDF File

IRF7832
IRF7832

Overview
PD - 94594E IRF7832 Applications l Synchronous MOSFET for Notebook VDSS Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in 30V Networking Systems Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance S S S l Fully Characterized Avalanche Voltage G and Current l 20V VGS Max.
Gate Rating l 100% tested for Rg HEXFET® Power MOSFET RDS(on) max Qg :4.
0m @VGS = 10V 34nC AA 1 8D 2 7D 3 6D 4 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter fRθJL Junction-to-Drain Lead RθJA Junction-to-Ambient Max.
30 ± 20 20 16 160 2.
5 1.
6 0.
02 -55 to + 155 Units V A W W/°C °C Typ.
––– ––– Max.
20 50 Units °C/W Notes  through „ are on page 10 www.
irf.
com 1 06/30/05 IRF7832 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 30 ––– ––– ––– 1.
39 ––– ––– 0.
023 3.
1 3.
7 ––– 5.
7 ––– ––– 4.
0 4.
8 2.
32 ––– V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA emΩ VGS = 10V, ID = 20A eVGS = 4.
5V, ID = 16A V VDS = VGS, ID = 250µA mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.
0 µA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance Qg Total Gate Charge 77 ––– ––– ––– 34 51 S VDS = 15V, ID = 16A Qgs1 Qgs2 Qgd Qgodr Pre-Vth Gate-to-Source Charge Post...


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