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M68739M

Mitsubishi
Part Number M68739M
Manufacturer Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Published Apr 26, 2005
Detailed Description MITSUBISHI RF POWER MODULE M68739M SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING ...
Datasheet PDF File M68739M PDF File

M68739M
M68739M


Overview
MITSUBISHI RF POWER MODULE M68739M SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.
2 26.
6±0.
2 21.
2±0.
2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.
5±0.
1 1 5 1 2 3 4 4 5 φ 0.
45 6±1 13.
7±1 18.
8±1 23.
9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤2.
5V, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω f=155-168MHz, ZG=ZL=50Ω Ratings 16 3 30 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note.
Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd.
harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 155 7 50 Max 168 Unit MHz W % dBc - VDD=9.
6V, VGG=2.
5V, Pin=20mW ZG=50Ω, VDD=4.
8-13.
2V, Load VSWR <4:1 VDD=13.
2V, Pin=20mW, PO=7W (VGG Adjust), ZL=20:1 -20 4 No parasitic oscillation No degradation or destroy Note.
Above parameters, ratings, limits and test conditions are subject to change.
Nov.
´97 ...


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