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NTE2533

NTE
Part Number NTE2533
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 1...
Datasheet PDF File NTE2533 PDF File

NTE2533
NTE2533

Overview
NTE2533 Silicon NPN Transistor High–Definition Color Display Horizontal Deflection Output Features: D High Speed: tf = 100ns Typ D High Breakdown Voltage: VCBO = 1500V D High Reliability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO .
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1500V Collector to Emitter Voltage, VCEO .
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800V Emitter to Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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25A Peak .
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50A Collector Dissipation, PC .
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250W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Collector Sustaining Voltage Emitter Cutoff Current DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Storage Time Fall Time Symbol ICES ICBO IEBO hFE VCE(sat) VBE(sat) tstg tf Test Conditions VCE = 1500V VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 20A IC = 20A, IB = 5A IC = 20A, IB = 5A IC = 12A, IB1 = 2.
4A, IB2 = –4.
8A Min – – 800 – 8 4 – – – – Typ – – – – – – – – – – Max 1.
0 10 – 1.
0 30 8 5 1.
5 3 0.
2 V V µs µs Unit...


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