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NTE2570

Part Number	NTE2570
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE2570 (NPN) & NTE2571 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Sa...
Datasheet	NTE2570 PDF File

Overview

NTE2570 (NPN) & NTE2571 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector–Emitter Saturation Voltage D High Current Capacity Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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90V Collector–Emitter Voltage, VCEO .
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80V Emitter–Base Voltage, VEBO .
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6V Collector Current, IC Continuous .
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7A Peak .
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12A Collector Power Dissipation, PC TA = +25°C .
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2W TC = +25°C .
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30W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cut–Off Current Emitter Cut–Off Current DC Current Gain Gain–Bandwidth Product Collector–Emitter Saturation Voltage NTE2570 NTE2571 Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 V(BR)EBO IC = 1mA, IC = 0 Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ Symbol ICBO IEBO hFE fT VCE(sa...

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