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IXFT80N10

IXYS Corporation
Part Number IXFT80N10
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published Oct 13, 2006
Detailed Description www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sh...
Datasheet PDF File IXFT80N10 PDF File

IXFT80N10
IXFT80N10

Overview
www.
DataSheet4U.
com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V = 80 A ID25 RDS(on) = 12.
5 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 100 100 ±20 ±30 80 75 320 80 50 2.
5 5 300 -55 to +150 150 -55 to +150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 ...


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