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AO4609

Alpha & Omega Semiconductors
Part Number AO4609
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Jun 7, 2007
Detailed Description July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description The AO4609 uses advanced tr...
Datasheet PDF File AO4609 PDF File

AO4609
AO4609

Overview
July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Features n-channel p-channel -30V VDS (V) = 30V ID = 8.
5A -3A RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = 10V) < 28mΩ (VGS=4.
5V) < 180mΩ (VGS = 4.
5V) < 260mΩ (VGS = 2.
5V) D2 S2 G2 S1 G1 www.
DataSheet4U.
com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±12 -3 -2.
4 -6 2 1.
28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 8.
5 6.
6 40 2 1.
28 -55 to 150 W °C Junction and Storage Temperatur...


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