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AO4612

Alpha & Omega Semiconductors
Part Number AO4612
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Jun 7, 2007
Detailed Description AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench t...
Datasheet PDF File AO4612 PDF File

AO4612
AO4612

Overview
AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features n-channel VDS (V) = 60V ID = 4.
5A (VGS=10V) RDS(ON) < 56mW (VGS=10V) < 77mW (VGS=4.
5V) p-channel -60V -3.
2A (VGS = -10V) RDS(ON) < 105mW (VGS = -10V) < 135mW (VGS = -4.
5V) 100% Rg tested SOIC-8 Top View Bottom View D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t ≤ 10s Max...


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