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MGF0913A

L & S BAND GaAs FET

Description

MITSUBISHI SEMICONDUCTOR MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm High power gain Gp=13dB(TYP.) @f=1.9GHz High power added efficiency ηadd=48%(TYP.) @f=1.9GHz,Pin...

Mitsubishi Electric

MGF0913A PDF File

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