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MGF0915A

L & S BAND GaAs FET

Description

MITSUBISHI SEMICONDUCTOR MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm(TYP.) @f=1.9GHz,Pin=23dBm High power gain Gp=14.5 dB(TYP.) @f=1.9GHz High power added efficiency ηadd=50 %(TYP.) @f=1.9...

Mitsubishi Electric

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