Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output a...
Inchange Semiconductor
2SC4759 PDF File
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