Silicon N-Channel IGBT
Description
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GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Character...
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