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FDMS86200

N-Channel MOSFET

Description

FDMS86200 N-Channel Power Trench® MOSFET November 2012 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Features Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compli...

Fairchild Semiconductor

FDMS86200 PDF File

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