DatasheetsPDF.com

C3563

Part Number	C3563
Manufacturer	Inchange Semiconductor
Description	2SC3563
Published	Apr 19, 2015
Detailed Description	INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SC3563 DESCRIPT...
Datasheet	C3563 PDF File

Overview

INCHANGE Semiconductor www.
DataSheet4U.
com isc Silicon NPN Power Transistor isc Product Specification 2SC3563 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.
cnSYMBOL PARAMETER VALUE UNIT .
iscsemVCBO Collector-Base Voltage 600 V wwwVCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 10 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ 40 W 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature...

Similar Datasheet

C350 Phase Control SCR - Powerex Power Semiconductors
C3500 Silicon Power Transistor - ETC
C3502 2SC3502 - Sanyo Semicon Device
C3503 2SC3503 - Sanyo Semicon Device
C3504 2SC3504 - Sanyo Semicon Device
C3505 2SC3505 - SavantIC
C3506 Silicon NPN Transistor - Panasonic
C3507 2SC3507 - Panasonic
C3514 2SC3514 - Inchange Semiconductor
C3515 2SC3515 - Toshiba

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)