N-Channel MOSFET
Description
HFS4N50
July 2005
HFS4N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 2.0 Ω ID = 3.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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