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AO4724

Alpha & Omega Semiconductors
Part Number AO4724
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 24, 2015
Detailed Description AO4724 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4724 uses advanced trench technology with a mon...
Datasheet PDF File AO4724 PDF File

AO4724
AO4724

Overview
AO4724 30V N-Channel MOSFET SRFET TM General Description SRFET TM The AO4724 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary VDS (V) = 30V ID = 10.
5A (VGS = 10V) RDS(ON) < 17.
5mΩ (VGS = 10V) RDS(ON) < 29 mΩ (VGS = 4.
5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B 10.
5 7.
7 ID 8.
5 6.
2 IDM 80 TA=25°C Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.
3mH B PD IAR EAR 3.
1 1.
7 2.
0 1.
1 13 25 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A W A mJ °C Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO4724 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=10.
5A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=4.
5V, ID=8A VDS=5V, ID=10.
5A IS=1A,VGS=0V Maximum Body-Diode + Schottky Continuous Current TJ=55°C TJ=125°C 30 1.
3 80 0.
1 20 100 1.
64 2 14.
4 21.
5 22.
7...


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