| Part Number | TPC8203 |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8203 Lithium Ion Battery Applications Portable Equipment Applicat... |
| Features |
e avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Single-device operation (Note 3a)
Single-device operation (Note 3a)
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note...
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| File Size | 419.20KB |
| Datasheet |
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TPC8201 : TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 37 mΩ (typ.) : |Yfs| = 6 S (typ.) Unit: mm : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device o.
TPC8202 : TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l 2.5-V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 41 mΩ (typ.) l High forward transfer admittance : |Yfs| = 9 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.1 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 5 20 1.5 W PD(2.
TPC8204 : TPC8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8204 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 16 mΩ (typ.) l High forward transfer admittance : |Yfs| = 18 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 6 24 1.5 W PD(2) 1.1 Unit V V V A JEDEC J.
TPC8205 : TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 5 20 1.1 W PD(2) 0.5 Unit V V V A .
TPC8206 : TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications · · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (N.
TPC8207 : TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (No.
TPC8208 : TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm · Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) · High forward transfer admittance: |Yfs| = 6.3 S (typ.) · Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) · Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Drain power dissipation (t = 10 s) (Note.
TPC8209 : TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l l l l l Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.1 .