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TPC8207

Toshiba Semiconductor
Part Number TPC8207
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Oct 14, 2005
Detailed Description TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications ...
Datasheet PDF File TPC8207 PDF File

TPC8207
TPC8207

Overview
TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.
) High forward transfer admittance: |Yfs| = 11 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.
5~1.
2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 ±12 6 24 1.
5 W 1.
1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.
08 g (typ.
) 0.
75 W 0.
45 Circuit Configuration 8 7 6 5 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 46.
8 6 0.
1 150 −55~150 mJ A mJ °C °C 1 2 3 4 Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2004-07-06 TPC8207 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.
3 °C/W 114 Unit Thermal resistance, channel to ambient (Note 2a) Single-device value at (t = 10 s) dual operation (Note 3b) Thermal resistance, channel to ambient (Note 2b) Single-device value at (t = 10 s) dual operation (Note 3b) Single-device operation (Note 3a) 167 °C/W 278 Marking (Note 6) TPC8207 Part No.
(or abbreviation code) Lot...


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