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TPC8205

Toshiba Semiconductor
Part Number TPC8205
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Application...
Datasheet PDF File TPC8205 PDF File

TPC8205
TPC8205

Overview
TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.
) High forward transfer admittance: |Yfs| = 10 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.
5~1.
2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 5 20 1.
1 W PD(2) 0.
5 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-3R1E Drain power dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.
035 g (typ.
) PD (1) 0.
6 W Circuit Configuration PD (2) EAS IAR EAR Tch Tstg 0.
35 32.
5 5 0.
05 150 −55~150 mJ A mJ °C °C Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2003-02-20 TPCS8205 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 Unit Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) 250 °C/W 208 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 357 Marking (Note 6) Type S8205 ※ Lot...


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