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TPC8209

Toshiba Semiconductor
Part Number TPC8209
Manufacturer Toshiba Semiconductor
Description Field Effect Transistor
Published Sep 29, 2014
Detailed Description TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) TPC8209 Lithium Ion Battery Applications ...
Datasheet PDF File TPC8209 PDF File

TPC8209
TPC8209

Overview
TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l l l l l Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.
) High forward transfer admittance: |Yfs| = 10 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.
5 W PD(2) 1.
1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Drain power dissipation (t = 10s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.
08 g (typ.
) Drain power dissipation (t = 10s) (Note 2b) PD (1) 0.
75 W Circuit Configuration 8 7 6 5 PD (2) EAS IAR EAR Tch Tstg 0.
45 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 32.
5 5 0.
1 150 −55~150 mJ A mJ °C °C 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2003-02-18 TPC8209 Thermal Characteristics Characteristics Single-device operation (Note 2a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.
3 Unit Thermal resistance, channel to ambient (t = 10s) (Note 1a) Single-device value at dual operation (Note 2b) 114 °C/W 167 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b) Single-device operation (Note 2a) 278 Marking (Note 6) TPC8209 ※ Type Lot No.
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