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TPC8208

Toshiba Semiconductor
Part Number TPC8208
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications ...
Datasheet PDF File TPC8208 PDF File

TPC8208
TPC8208


Overview
TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm · Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.
) · High forward transfer admittance: |Yfs| = 6.
3 S (typ.
) · Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) · Enhancement-mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Drain power dissipation (t = 10 s) (Note 2b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive av...


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