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TPC8206

Toshiba Semiconductor
Part Number TPC8206
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications N...
Datasheet PDF File TPC8206 PDF File

TPC8206
TPC8206

Overview
TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications · · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.
) High forward transfer admittance: |Yfs| = 7.
0 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 60 60 ±20 5 20 1.
5 W 1.
0 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.
080 g (typ.
) 0.
75 W 0.
45 Circuit Configuration 8 7 6 5 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 92 5 0.
1 150 -55 to 150 mJ A mJ °C °C 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2003-02-18 TPC8206 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.
3 °C/W 125 Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 167 °C/W 278 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Marking (Note 6) TPC8206...


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