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TPC8201

Toshiba Semiconductor
Part Number TPC8201
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8201 Lithium Ion Battery Applications P...
Datasheet PDF File TPC8201 PDF File

TPC8201
TPC8201

Overview
TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 37 mΩ (typ.
) : |Yfs| = 6 S (typ.
) Unit: mm : IDSS = 10 µA (max) (VDS = 30 V) : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.
5 W PD(2) 1.
1 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Weight: 0.
08 g (typ.
) PD (1) 0.
75 W Circuit Configuration PD (2) EAS IAR EAR Tch Tstg 0.
45 32.
5 5 0.
1 150 −55~150 mJ A mJ °C °C Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2003-02-20 TPC8201 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.
3 Unit Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) 114 °C/W 167 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) 278 Marking (Note 6) TPC8201 ※ Type Lot No.
Note 1: Please use devices on condition that the chan...


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