TOSHIBA
Transistor Silicon-Germanium
NPN Epitaxial Planar Type
MT3S113
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
MT3S113
Unit: mm
FEATURES
• Low Noise Figure:NF=1.
15dB (typ.
) (@ f=1GHz) • High Gain:|S21e|2=11.
8dB (typ.
) (@ f=1GHz)
Marking
R7
1.
Base 2.
Emitter 3.
Collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
S-Mini
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.
012 g (typ.
)
Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range
VCES
13
V
VCEO
5.
3
V
VEBO
0.
6
V
IC
100
mA
IB
10
mA
...