INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
4N55
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 550V(Min) ·Fast Switching Speed
APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
550 ±30
4
V V A
ID(puls)
Pulse Drain Current
10 A
Ptot Total Dissipation@TC=25℃
40 W
Tj Max.
Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Therma...